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• Technical overview

Luxin-Semi IGBT discrete product series feature the latest generation of Trench Field-Stop technology,with voltage range from 650V, 1200V, 1350V to 1700V and also 10A, 40A, 50A, 100A, 120A, 160A, 200A to 300Afrom point view of current level. With a precise focus on design and optimization, Luxin-Semi products excel in achieving higher power density, superior performance, and enhanced reliability by addressing critical factors such as conduction voltage drop (Vcesat), switch losses (Eon and Eoff), and short-circuit withstand capability (Tsc). As a result, these products are ideally suited for wide applications, including new energy vehicles, motor drives, high-frequency power supplies, heating, and other related applications.

Features and advantages:

1. Optimize the voltage withstand terminal structure to achieve high voltage blocking capability for IGBT , achieve industrial and automotive grade reliability standards;

2. Control the minority lifetime, optimize the saturation voltage drop and switching speed, and achieve the optimal performance of safety working area (SOA) and short-circuit current safety working area SCSOA;

3. Improve the design reliability of IGBT active region cell and inhibit the latch-up effect of IGBT;

4. Adjust the back thinning, injection, annealing, back gold and other processes; Achieve mass production of 60um~180um wafer thickness.